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BSC889N03LSGATMA1

BSC889N03LSGATMA1

MOSFET N-CH 30V 13A/45A TDSON

BSC889N03LSGATMA1

BSC889N03LSGATMA1

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Part No :

BSC889N03LSGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 13A/45A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
994499 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
BSC889N03LSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.3 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
BSC889N03LSGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC889N03LSGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC889N03LSGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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