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GA10SICP12-263

GA10SICP12-263

TRANS SJT 1200V 25A D2PAK

GA10SICP12-263

GA10SICP12-263

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Part No :

GA10SICP12-263

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 25A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
274427 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
GA10SICP12-263 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:100mOhm @ 10A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:1403 pF @ 800 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (7-Lead)
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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