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IPD122N10N3GATMA1

IPD122N10N3GATMA1

MOSFET N-CH 100V 59A TO252-3

R1EX24008ASAS0A#U0

R1EX24008ASAS0A#U0

EEPROM, 1KX8, SERIAL

IPD122N10N3GATMA1

IPD122N10N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD122N10N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 59A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
34187 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPD122N10N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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