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IPW65R041CFDFKSA1

IPW65R041CFDFKSA1

MOSFET N-CH 650V 68.5A TO247-3

IPW65R041CFDFKSA1

IPW65R041CFDFKSA1

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Part No :

IPW65R041CFDFKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 68.5A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11474 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
IPW65R041CFDFKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 100 V
FET Feature:-
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
IPW65R041CFDFKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R041CFDFKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R041CFDFKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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