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IPP80R1K2P7XKSA1

IPP80R1K2P7XKSA1

MOSFET N-CH 800V 4.5A TO220-3

IPP80R1K2P7XKSA1

IPP80R1K2P7XKSA1

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Part No :

IPP80R1K2P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 4.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
194219 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPP80R1K2P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 500 V
FET Feature:-
Power Dissipation (Max):37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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