MOSFET N-CH 150V 90A TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 80 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4100 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 455W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPU80R4K5P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.5A TO251-3 |
|
NVMFS5C612NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
IRFSL7534PBFRochester Electronics |
MOSFET N-CH 60V 195A TO262 |
|
SI7738DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 30A PPAK SO-8 |
|
FDD6670ALRochester Electronics |
MOSFET N-CH 30V 84A DPAK |
|
IRFR9024NTRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 11A DPAK |
|
SQJA96EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
PSMN041-80YLXNexperia |
MOSFET N-CH 80V 25A LFPAK56 |
|
ECH8310-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 9A 8ECH |
|
NTD4858N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.2A/73A IPAK |
|
SQ2319ADS-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 4.6A SOT23-3 |
|
IRFP9140NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO247AC |
|
IXFN102N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A SOT227B |