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R6007ENX

R6007ENX

MOSFET N-CH 600V 7A TO220FM

R6007ENX

R6007ENX

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Part No :

R6007ENX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 7A TO220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10219 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 23 - Dec 27 2024
PDF
R6007ENX PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:620mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
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