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FQPF7N60

FQPF7N60

POWER FIELD-EFFECT TRANSISTOR, 4

FQPF7N60

FQPF7N60

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Part No :

FQPF7N60

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14298 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
FQPF7N60 PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.43 pF @ 25 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF7N60 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF7N60 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF7N60 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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