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STH160N4LF6-2

STH160N4LF6-2

MOSFET N-CH 40V 120A H2PAK-2

1N6135US

1N6135US

TVS DIODE

STH160N4LF6-2

STH160N4LF6-2

Image is for reference, please contact us to get the real picture

Part No :

STH160N4LF6-2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 40V 120A H2PAK-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
623862 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
STH160N4LF6-2 PDF
Type Description
Series:DeepGATE™, STripFET™ VI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:181 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8130 pF @ 20 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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