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BSC079N10NSGATMA1

BSC079N10NSGATMA1

MOSFET N-CH 100V 13.4A 8TDSON

CY7C25682KV18-550BZXC

CY7C25682KV18-550BZXC

IC SRAM 72MBIT PARALLEL 165FBGA

BSC079N10NSGATMA1

BSC079N10NSGATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC079N10NSGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 13.4A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14890 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
BSC079N10NSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13.4A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5900 pF @ 50 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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