SICFET N-CH 900V 23A TO247-3
NI USB-6218 BNC BUS-POWERED M SE
Type | Description |
---|---|
Series: | C3M™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 155mOhm @ 15A, 15V |
Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 17.3 nC @ 15 V |
Vgs (Max): | +18V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 414 pF @ 600 V |
FET Feature: | - |
Power Dissipation (Max): | 97W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STD11NM50NSTMicroelectronics |
MOSFET N-CH 500V 8.5A DPAK |
|
NTTFS5C670NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 16A/70A 8WDFN |
|
FDB20N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 20A D2PAK |
|
ZVN4306GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2.1A SOT223 |
|
SI7846DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8 |
|
IPAW70R600CEXKSA1Rochester Electronics |
MOSFET N-CH 700V 10.5A TO220-31 |
|
NTMFS4899NFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.4A/75A 5DFN |
|
SCT3030KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 72A TO247N |
|
SQD40N10-25_GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A TO252 |
|
FDS4141-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 10.8A 8SOIC |
|
IXTA6N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 6A TO263 |
|
SI8806DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 12V 4MICROFOOT |
|
C2M1000170DWolfspeed - a Cree company |
SICFET N-CH 1700V 4.9A TO247-3 |