N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UPA2713GR-E1-ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
MSC40SM120JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 55A SOT227 |
|
IPD60R385CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO252-3 |
|
RFP6P10Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVTFS5811NLTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SI7430DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8 |
|
NDT3055Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4A SOT-223-4 |
|
VP0106N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 250MA TO92-3 |
|
AUIRF6215Rochester Electronics |
MOSFET P-CH 150V 13A TO220AB |
|
NTD40N03RT4Rochester Electronics |
MOSFET N-CH 25V 7.8A/32A DPAK |
|
NVD5C684NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 38A DPAK |
|
SSM3K15AFS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA SSM |
|
RQ5C020TPTLROHM Semiconductor |
MOSFET P-CH 20V 2A TSMT3 |