MOSFET P-CH 80V 110A TO263
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 270 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10850 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 13.6W (Ta), 375W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTTD4401FR2GRochester Electronics |
MOSFET P-CH 20V 2.4A MICRO8 |
|
DMT31M7LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 30A PWRDI5060 |
|
IPP037N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO220-3 |
|
IRFP4127PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 75A TO247AC |
|
IRLR3410TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
IRF510STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A TO263 |
|
SCH1433-TL-WRochester Electronics |
MOSFET N-CH 20V 3.5A SOT563/SCH6 |
|
PMV55ENEARNexperia |
MOSFET N-CH 60V 3.1A TO236AB |
|
SI1467DH-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A SC70-6 |
|
FQB10N20CTMRochester Electronics |
MOSFET N-CH 200V 9.5A D2PAK |
|
IRLZ44STRRPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
AOI409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 26A TO251A |
|
2SK4085LS-1ERochester Electronics |
MOSFET N-CH 500V 11A TO220F-3FS |