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IRF7601PBF

IRF7601PBF

MOSFET N-CH 20V 5.7A MICRO8

IRF7601PBF

IRF7601PBF

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Part No :

IRF7601PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 20V 5.7A MICRO8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
053505 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRF7601PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:35mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro8™
Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF7601PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF7601PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF7601PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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