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IRFL014NPBF

IRFL014NPBF

MOSFET N-CH 55V 1.9A SOT223

IRFL014NPBF

IRFL014NPBF

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Part No :

IRFL014NPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 1.9A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14336 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
IRFL014NPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:160mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
IRFL014NPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFL014NPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFL014NPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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