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TSM4ND60CI C0G

TSM4ND60CI C0G

MOSFET N-CH 600V 4A ITO220

JAN1N974DUR-1

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TSM4ND60CI C0G

TSM4ND60CI C0G

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Part No :

TSM4ND60CI C0G

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 600V 4A ITO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10464 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:582 pF @ 50 V
FET Feature:-
Power Dissipation (Max):41.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220
Package / Case:TO-220-3 Full Pack, Isolated Tab
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