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NDPL180N10BG

NDPL180N10BG

POWER FIELD-EFFECT TRANSISTOR

NDPL180N10BG

NDPL180N10BG

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Part No :

NDPL180N10BG

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10541 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
NDPL180N10BG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V, 15V
Rds On (Max) @ Id, Vgs:3mOhm @ 15V, 50A
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6.95 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 200W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
NDPL180N10BG is available at GangBo-ic.com, Please review product page below for detailed information, including NDPL180N10BG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NDPL180N10BG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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