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IPB60R090CFD7ATMA1

IPB60R090CFD7ATMA1

MOSFET N-CH 650V 25A TO263-3-2

IPB60R090CFD7ATMA1

IPB60R090CFD7ATMA1

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Part No :

IPB60R090CFD7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 25A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
413341 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:CoolMOS™ CFD7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2103 pF @ 400 V
FET Feature:-
Power Dissipation (Max):124W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R090CFD7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB60R090CFD7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB60R090CFD7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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