MOSFET P-CH 15V 1.6A 8SOIC
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 15 V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 10V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.45 nC @ 10 V |
Vgs (Max): | +2V, -15V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 791mW (Ta) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRLR2908TRLPBF-INFRochester Electronics |
IRLR2908 - HEXFET POWER MOSFET |
|
AOD413AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 12A TO252 |
|
NTP75N03-006Rochester Electronics |
MOSFET N-CH 30V 75A TO220AB |
|
FDS6679ZRochester Electronics |
MOSFET P-CH 30V 13A 8SOIC |
|
SQJ148EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 15A PPAK SO-8 |
|
SPW32N50C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 32A TO247-3 |
|
IXFX120N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 120A PLUS247-3 |
|
DMTH4007LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 15.5A PWRDI5060 |
|
BFL4036-1ERochester Electronics |
MOSFET N-CH 500V 9.6A TO220F-3FS |
|
TK14A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 14A TO220SIS |
|
IRL640PBFVishay / Siliconix |
MOSFET N-CH 200V 17A TO220AB |
|
IPW90R340C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 15A TO247-3 |
|
FQD13N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A DPAK |