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IRFHS8342TR2PBF

IRFHS8342TR2PBF

MOSFET N-CH 30V 8.8A/19A TSDSON

IRFHS8342TR2PBF

IRFHS8342TR2PBF

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Part No :

IRFHS8342TR2PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 8.8A/19A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
482948 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 03 - Jan 07 2025
PDF
IRFHS8342TR2PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 25 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-6
Package / Case:6-PowerVDFN
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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