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NCV8440ASTT1G

NCV8440ASTT1G

POWER FIELD-EFFECT TRANSISTOR, 2

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NCV8440ASTT1G

NCV8440ASTT1G

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Part No :

NCV8440ASTT1G

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10727 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 25 - Oct 29 2025
PDF
NCV8440ASTT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):59 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3.5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:1.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 4.5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 35 V
FET Feature:-
Power Dissipation (Max):1.69W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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