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SIR800DP-T1-GE3

SIR800DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SIR800DP-T1-GE3

SIR800DP-T1-GE3

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Part No :

SIR800DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 50A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11934 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
SIR800DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:5125 pF @ 10 V
FET Feature:-
Power Dissipation (Max):5.2W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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