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FQAF6N80

FQAF6N80

MOSFET N-CH 800V 4.4A TO3PF

LTC1559CS-3.3#TRPBF

LTC1559CS-3.3#TRPBF

IC BATT PWR MGT NICAD 1C 16SOIC

FQAF6N80

FQAF6N80

Image is for reference, please contact us to get the real picture

Part No :

FQAF6N80

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 4.4A TO3PF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10892 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
FQAF6N80 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.5 pF @ 25 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
FQAF6N80 is available at GangBo-ic.com, Please review product page below for detailed information, including FQAF6N80 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQAF6N80 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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