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IXTA1R4N120P

IXTA1R4N120P

MOSFET N-CH 1200V 1.4A TO263

IXTA1R4N120P

IXTA1R4N120P

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Part No :

IXTA1R4N120P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1200V 1.4A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
402140 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
IXTA1R4N120P PDF
Type Description
Series:Polar™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 25 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (IXTA)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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