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IXTA1R4N120P

IXTA1R4N120P

MOSFET N-CH 1200V 1.4A TO263

IXTA1R4N120P

IXTA1R4N120P

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Part No :

IXTA1R4N120P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1200V 1.4A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
402140 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
IXTA1R4N120P PDF
Type Description
Series:Polar™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 25 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (IXTA)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA1R4N120P is available at GangBo-ic.com, Please review product page below for detailed information, including IXTA1R4N120P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTA1R4N120P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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