MOSFET N-CH 1200V 1.4A TO263
RUBBER BOOT
Type | Description |
---|---|
Series: | Polar™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 13Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 24.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 666 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 86W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXTA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK31A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO220SIS |
|
FDMS1D5N03Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 218A 8PQFN |
|
STF43N60DM2STMicroelectronics |
MOSFET N-CH 600V 34A TO220FP |
|
FDB088N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 120A D2PAK |
|
IRFS640ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQA30N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 30A TO3PN |
|
NTY100N10Rochester Electronics |
MOSFET N-CH 100V 123A TO264 |
|
HAT2166H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
|
IPA80R750P7XKSA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 800V 7A TO220 |
|
FCPF600N65S3R0LRochester Electronics |
MOSFET N-CH 650V 6A TO220F-3 |
|
MMBF0201NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 300MA SOT23-3 |
|
NTBG080N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 30A D2PAK-7 |
|
SPB11N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |