HEXFET POWER MOSFET
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 162A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4mOhm @ 95A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 200 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7.36 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI7636DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A PPAK SO-8 |
|
AUIRFR6215TRLIR (Infineon Technologies) |
MOSFET P-CH 150V 13A DPAK |
|
FDB6035ALRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLUS4C16NTBGRochester Electronics |
MOSFET N-CH 30V 6.1A 6UDFN |
|
IRFR220PBFVishay / Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
|
AOK2500LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 14A/180A TO247 |
|
NVTFS4C08NWFTWGRochester Electronics |
MOSFET N-CH 30V 17A 8WDFN |
|
STL10N60M2STMicroelectronics |
MOSFET N-CH 600V 5.5A PWRFLAT56 |
|
RM40P07Rectron USA |
MOSFET P-CHANNEL 40V 6.2A 8SOP |
|
DMN3016LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12.4A TO252 |
|
IRLR210ATMRochester Electronics |
MOSFET N-CH 200V 2.7A DPAK |
|
IPD040N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STF4N62K3STMicroelectronics |
MOSFET N-CH 620V 3.8A TO220FP |