MOSFET P-CH 450V 4.7A TO252
CBL 6COND 16AWG SHLD
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450 V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.9Ohm @ 1.05A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.7 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 564 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
DMP45H150DHE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 450V 250MA SOT223 |
![]() |
IRF122Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSZ0803LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 9A/40A TSDSON |
![]() |
RM42N200DFRectron USA |
MOSFET N-CHANNEL 200V 42A 8DFN |
![]() |
SI4056DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 11.1A 8SO |
![]() |
NTB22N06LRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
AOD2N100Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 2A TO252 |
![]() |
IPB054N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 80A D2PAK |
![]() |
SIR662DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
![]() |
STN3NF06LSTMicroelectronics |
MOSFET N-CH 60V 4A SOT223 |
![]() |
NTD3808NT4GRochester Electronics |
MOSFET N-CH 16V 12A/76A DPAK |
![]() |
FDBL86066-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 185A 8HPSOF |
![]() |
FDD5680Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.5A TO252 |