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SCT2750NYTB

SCT2750NYTB

SICFET N-CH 1700V 5.9A TO268

Q-0C00G001A.75M

Q-0C00G001A.75M

BNC-SJ/BNC-RP RG59 0.75M

SCT2750NYTB

SCT2750NYTB

Image is for reference, please contact us to get the real picture

Part No :

SCT2750NYTB

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1700V 5.9A TO268
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11462 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
SCT2750NYTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:975mOhm @ 1.7A, 18V
Vgs(th) (Max) @ Id:4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 18 V
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:275 pF @ 800 V
FET Feature:-
Power Dissipation (Max):57W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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