RELAY GEN PURPOSE DPDT 7A 48V
MOSFET N-CH 30V 7A POWERDI3333-8
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13mOhm @ 11.2A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44.6 nC @ 10 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1886 pF @ 15 V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 980mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI3333-8 |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTA8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO263 |
|
DMP6023LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7.7A PWRDI3333-8 |
|
IPB034N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A D2PAK |
|
SIR836DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 21A PPAK SO-8 |
|
FDS8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.2A 8SOIC |
|
CSD17579Q5ATexas Instruments |
MOSFET N-CH 30V 25A 8VSON |
|
BUK7M5R0-40HXNexperia |
MOSFET N-CH 40V 85A LFPAK33 |
|
SQS484EN-T1_BE3Vishay / Siliconix |
MOSFET N-CH 40V 16A 1212-8 |
|
IMBF170R1K0M1XTMA1IR (Infineon Technologies) |
SICFET N-CH 1700V 5.2A TO263-7 |
|
AUIRFZ44VRochester Electronics |
MOSFET N-CH 60V 55A TO220AB |
|
IRFUC20PBFVishay / Siliconix |
MOSFET N-CH 600V 2A TO251AA |
|
IRL8114PBFRochester Electronics |
MOSFET N-CH 30V 90A TO220AB |
|
SIHG21N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO247AC |