MOSFET N-CH 650V 9A TO220-3
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 360mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 555 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 41W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3K37MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA VESM |
|
MMBF1374T1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIHF7N60E-GE3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 7A TO220 |
|
FDMS1D4N03SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 211A 8PQFN |
|
SI4420DYTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 12.5A 8SO |
|
SQ3419EV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 6.9A 6TSOP |
|
SSR1N60BTM-WSRochester Electronics |
MOSFET N-CH 600V 900MA DPAK |
|
FDC654PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.6A SUPERSOT6 |
|
SSM3J372R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -30V -6A SOT23F |
|
FQP3P50Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2.7A TO220-3 |
|
NTD65N03RRochester Electronics |
MOSFET N-CH 25V 9.5A/32A DPAK |
|
STD2NK90Z-1STMicroelectronics |
MOSFET N-CH 900V 2.1A IPAK |
|
FDA59N30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 59A TO3PN |