MOSFET N-CH 55V 10A DPAK
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 140mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.9 nC @ 5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 265 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOD66923Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 16.5A/58A TO252 |
|
IXTX6N200P3HVWickmann / Littelfuse |
MOSFET N-CH 2000V 6A TO247PLUSHV |
|
NVMFS5C404NT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
STD16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A DPAK |
|
PSMN2R6-40YS,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
FDZ299PRochester Electronics |
MOSFET P-CH 20V 4.6A 9BGA |
|
STB8N90K5STMicroelectronics |
MOSFET N-CH 900V 8A D2PAK |
|
IXTT26N60PWickmann / Littelfuse |
MOSFET N-CH 600V 26A TO268 |
|
STI33N65M2STMicroelectronics |
MOSFET N-CH 650V 24A I2PAK |
|
NTJS3151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 2.7A SC88/SC70-6 |
|
FDMS86180Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 151A POWER56 |
|
IRLR3103PBFRochester Electronics |
MOSFET N-CH 30V 55A DPAK |
|
FDI040N06Rochester Electronics |
MOSFET N-CH 60V 120A I2PAK |