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IRFS4229PBF

IRFS4229PBF

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IRFS4229PBF

IRFS4229PBF

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Part No :

IRFS4229PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 45A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
551555 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IRFS4229PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:48mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4.56 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4229PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS4229PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS4229PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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