MOSFET N-CH 60V 44A 8PDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 17mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1556 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 73.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PDFN (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOTF260LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 19A/92A TO220-3F |
|
VN0550N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
|
AOW190A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO262 |
|
IPI65R310CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STU13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A IPAK |
|
RSR025P03HZGTLROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3 |
|
FQD3N60CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A DPAK |
|
TK60E08K3,S1X(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 75V 60A TO220-3 |
|
TK20S04K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 20A DPAK |
|
IXFA110N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 110A TO263 |
|
C3M0016120DWolfspeed - a Cree company |
SICFET N-CH 1200V 115A TO247-3 |
|
IXTA3N110-TRLWickmann / Littelfuse |
MOSFET N-CH 1100V 3A TO263 |
|
IRFR6215PBFRochester Electronics |
PFET, 13A I(D), 150V, 0.295OHM, |