250W, GAN HEMT, 50V, 0.5-1.8GHZ,
Type | Description |
---|---|
Series: | GaN |
Package: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 1.2GHz ~ 1.4GHz |
Gain: | 17.8dB |
Voltage - Test: | 50 V |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | 500 mA |
Power - Output: | 250W |
Voltage - Rated: | 150 V |
Package / Case: | 440161 |
Supplier Device Package: | 440161 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MRF7S24250N-3STGNXP Semiconductors |
MRF7S24250N-3STG |
|
MRFE8VP8600HSR5NXP Semiconductors |
BROADBAND RF POWER LDMOS TRANSIS |
|
ADP3110A0001RZRRochester Electronics |
2 12V FET DRVR W/OUT DIS |
|
PH3830DL115Rochester Electronics |
N-CH TRENCHMOS LOGIC LEVEL FET |
|
BLC10G22XS-602AVTZAmpleon |
BLC10G22XS-602AVT/SOT1258/TRAYDP |
|
2SJ499-TL-ERochester Electronics |
PCH 4V DRIVE SERIES |
|
MAGX-000245-014000Metelics (MACOM Technology Solutions) |
TRANSISTOR RF 14W GAN |
|
MRF9060NBR1NXP Semiconductors |
FET RF 65V 945MHZ TO272-2 |
|
BLF6H10L-300PAmpleon |
RF FET |
|
ATF-521P8-BLKBroadcom |
FET RF 7V 2GHZ 8-LPCC |
|
PTFB082817FHV1XWSA1IR (Infineon Technologies) |
IC FET RF LDMOS H-34288 |
|
PTFA091201E-V4-R0Wolfspeed - a Cree company |
RF MOSFET LDMOS 28V H-36248-2 |
|
MRF1570NT1NXP Semiconductors |
FET RF 40V 470MHZ TO272-8 WRAP |