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A2G35S200-01SR3

A2G35S200-01SR3

AIRFAST RF POWER GAN TRANSISTOR

A2G35S200-01SR3

A2G35S200-01SR3

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Part No :

A2G35S200-01SR3

Manufacturer
NXP Semiconductors
Description
AIRFAST RF POWER GAN TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - RF
Availability
10182 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
A2G35S200-01SR3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:GaN HEMT
Frequency:3.4GHz ~ 3.6GHz
Gain:16.1dB
Voltage - Test:48 V
Current Rating (Amps):-
Noise Figure:-
Current - Test:291 mA
Power - Output:180W
Voltage - Rated:125 V
Package / Case:NI-400S-2S
Supplier Device Package:NI-400S-2S
A2G35S200-01SR3 is available at GangBo-ic.com, Please review product page below for detailed information, including A2G35S200-01SR3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for A2G35S200-01SR3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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