RF MOSFET HEMT 40V DIE
TVS DIODE DO214AA
MODEL FWA8600, NIC: 3 X IB CARDS
Type | Description |
---|---|
Series: | GaN |
Package: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 18GHz |
Gain: | 17dB |
Voltage - Test: | 40 V |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | 30 mA |
Power - Output: | 6W |
Voltage - Rated: | 100 V |
Package / Case: | Die |
Supplier Device Package: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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