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MRFG35003N6T1

MRFG35003N6T1

RF S BAND, GALLIUM ARSENIDE, N-C

RB-3.309D

RB-3.309D

DC DC CONVERTER +/-9V 1W

MRFG35003N6T1

MRFG35003N6T1

Image is for reference, please contact us to get the real picture

Part No :

MRFG35003N6T1

Manufacturer
Rochester Electronics
Description
RF S BAND, GALLIUM ARSENIDE, N-C
Catalog
Transistors - FETs, MOSFETs - RF
Availability
13984 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
MRFG35003N6T1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:pHEMT FET
Frequency:3.55GHz
Gain:9dB
Voltage - Test:6 V
Current Rating (Amps):-
Noise Figure:-
Current - Test:180 mA
Power - Output:3W
Voltage - Rated:8 V
Package / Case:PLD-1.5
Supplier Device Package:PLD-1.5
MRFG35003N6T1 is available at GangBo-ic.com, Please review product page below for detailed information, including MRFG35003N6T1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MRFG35003N6T1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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