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IRF40H233ATMA1

IRF40H233ATMA1

MOSFET N-CH 40V 35A 8PQFN

IRF40H233ATMA1

IRF40H233ATMA1

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Part No :

IRF40H233ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 35A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
787778 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
Type Description
Series:StrongIRFET™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Rds On (Max) @ Id, Vgs:6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:20V
Power - Max:3.8W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
IRF40H233ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF40H233ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF40H233ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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