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APTM120H57FT3G

APTM120H57FT3G

MOSFET 4N-CH 1200V 17A SP3

APTM120H57FT3G

APTM120H57FT3G

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Part No :

APTM120H57FT3G

Manufacturer
Microsemi
Description
MOSFET 4N-CH 1200V 17A SP3
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
257725 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
APTM120H57FT3G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:4 N-Channel (H-Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:17A
Rds On (Max) @ Id, Vgs:684mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:5155pF @ 25V
Power - Max:390W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP3
Supplier Device Package:SP3
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