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QJD1210SA1

QJD1210SA1

MOSFET 2N-CH 1200V 100A SIC

QJD1210SA1

QJD1210SA1

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Part No :

QJD1210SA1

Manufacturer
Powerex, Inc.
Description
MOSFET 2N-CH 1200V 100A SIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
737573 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
QJD1210SA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:100A
Rds On (Max) @ Id, Vgs:17mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:1.6V @ 34mA
Gate Charge (Qg) (Max) @ Vgs:330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:8200pF @ 10V
Power - Max:520W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
QJD1210SA1 is available at GangBo-ic.com, Please review product page below for detailed information, including QJD1210SA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for QJD1210SA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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