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BK/NON-30

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RJK0222DNS-00#J5

RJK0222DNS-00#J5

POWER FIELD-EFFECT TRANSISTOR

RJK0222DNS-00#J5

RJK0222DNS-00#J5

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Part No :

RJK0222DNS-00#J5

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
340000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:14A, 16A
Rds On (Max) @ Id, Vgs:9.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:810pF @ 10V
Power - Max:8W, 10W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-WDFN Exposed Pad
Supplier Device Package:8-DFN (5x6)
RJK0222DNS-00#J5 is available at GangBo-ic.com, Please review product page below for detailed information, including RJK0222DNS-00#J5 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RJK0222DNS-00#J5 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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