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NP30N06QDK-E1-AY

NP30N06QDK-E1-AY

POWER TR2 AUTOMOTIVE MOS DUAL N-

NP30N06QDK-E1-AY

NP30N06QDK-E1-AY

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Part No :

NP30N06QDK-E1-AY

Manufacturer
Renesas Electronics America
Description
POWER TR2 AUTOMOTIVE MOS DUAL N-
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
374737 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Rds On (Max) @ Id, Vgs:14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2250pF @ 25V
Power - Max:1W (Ta), 59W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Package / Case:8-PowerLDFN
Supplier Device Package:8-HUSON
NP30N06QDK-E1-AY is available at GangBo-ic.com, Please review product page below for detailed information, including NP30N06QDK-E1-AY price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NP30N06QDK-E1-AY to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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