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APTM100A13DG

APTM100A13DG

MOSFET 2N-CH 1000V 65A SP6

APTM100A13DG

APTM100A13DG

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Part No :

APTM100A13DG

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET 2N-CH 1000V 65A SP6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
554655 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
APTM100A13DG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:65A
Rds On (Max) @ Id, Vgs:156mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs:562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:15200pF @ 25V
Power - Max:1250W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP6
Supplier Device Package:SP6
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