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APTM100H35FT3G

APTM100H35FT3G

MOSFET 4N-CH 1000V 22A SP3

APTM100H35FT3G

APTM100H35FT3G

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Part No :

APTM100H35FT3G

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET 4N-CH 1000V 22A SP3
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
754575 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
APTM100H35FT3G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:4 N-Channel (H-Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:22A
Rds On (Max) @ Id, Vgs:420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:5200pF @ 25V
Power - Max:390W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP3
Supplier Device Package:SP3
APTM100H35FT3G is available at GangBo-ic.com, Please review product page below for detailed information, including APTM100H35FT3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for APTM100H35FT3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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