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SiT3372AI-4B9-25NH160.000000T

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BSM400D12P2G003

BSM400D12P2G003

SILICON CARBIDE POWER MODULE. B

BSM400D12P2G003

BSM400D12P2G003

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Part No :

BSM400D12P2G003

Manufacturer
ROHM Semiconductor
Description
SILICON CARBIDE POWER MODULE. B
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
514551 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:400A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 85mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:38000pF @ 10V
Power - Max:2450W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:-
Package / Case:Module
Supplier Device Package:Module
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