SILICON CARBIDE POWER MODULE. B
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 400A (Tc) |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 4V @ 85mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 38000pF @ 10V |
Power - Max: | 2450W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | - |
Package / Case: | Module |
Supplier Device Package: | Module |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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