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NTMFD1D4N02P1E

NTMFD1D4N02P1E

MOSFET N-CH 20V 8PQFN

NTMFD1D4N02P1E

NTMFD1D4N02P1E

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Part No :

NTMFD1D4N02P1E

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 20V 8PQFN
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
904490 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs:3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA, 2V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:7.2nC @ 4.5V, 21.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1180pF @ 13V, 3603pF @ 13V
Power - Max:960mW (Ta), 1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PQFN (5x6)
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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