MOSFET 4N-CH 1000V 19A SP3
Type | Description |
---|---|
Series: | POWER MOS 8™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: | 19A |
Rds On (Max) @ Id, Vgs: | 552mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
Power - Max: | 357W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FS70KM-06#B00Rochester Electronics |
70A, 100V, N-CHANNEL MOSFET |
|
NVMFD030N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
2SK1736-AZRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMN63D1LV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 550MA SOT563 |
|
MSCSM120AM027CD3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-D3 |
|
2SJ655-MG5Rochester Electronics |
GENERAL-PURPOSE SWITCHING DEVICE |
|
DMN3016LDV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 21A POWERDI3333-8 |
|
WAB400M12BM3Wolfspeed - a Cree company |
1200 V, 400 A HALF-BRIDGE MODULE |
|
APTC60HM45SCTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 49A SP4 |
|
DMNH6065SPDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
CPH3418-TL-H-ONRochester Electronics |
ULTRAHIGH-SPEED SWITCHING APPLIC |
|
SISF02DN-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CH 25V 1212-8 |
|
DMN12M7UCA10-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V X4-DSN3015- |