SMALL SIGNAL FIELD-EFFECT TRANSI
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | - |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 220mA (Ta) |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 12.3pF @ 15V |
Power - Max: | - |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFLGA |
Supplier Device Package: | 6-XLLGA (.90x.65) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
APTM10HM09FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 100V 139A SP3 |
![]() |
FS50KM-2-J2#E52Rochester Electronics |
DISCRETE / POWER MOSFET |
![]() |
NTMFD024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V T6 8DFN |
![]() |
AOC3870AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 6DFN |
![]() |
IRF1404PBF-ELRochester Electronics |
HEXFET POWER MOSFET |
![]() |
RF1S30P06Rochester Electronics |
30A, 60V, 0.065OHM, P-CHANNEL, |
![]() |
OP241,005WeEn Semiconductors Co., Ltd |
OP241/UNCASED/NO MARK*CHIPS ON |
![]() |
VN2410MRochester Electronics |
N-CHANNEL, MOSFET |
![]() |
2SK3706-MG5Rochester Electronics |
FOR 100V MOTOR DRIVERS |
![]() |
DMN3012LEG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
![]() |
SCH1402-S-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
![]() |
FDMS5361LRochester Electronics |
N-CHANNEL 60V 35A POWER MOSFET |
![]() |
FX205-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |