Type | Description |
---|---|
Series: | HiPerFET™, Polar3™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Rds On (Max) @ Id, Vgs: | 110mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6250pF @ 25V |
Power - Max: | 320W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 24-SMD Module, 9 Leads |
Supplier Device Package: | 24-SMPD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FX205-TL-E-ONRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
2SK2631-ERochester Electronics |
POWER MOSFET |
|
DMT6018LDR-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V V-DFN3030- |
|
DMN65D8LDWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 180MA SOT363 |
|
SI1036X-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V 610MA SC89-6 |
|
APTM20HM08FGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 208A SP6 |
|
NTTFD4D0N04HLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET, POWER, 40V POWERTRENCH P |
|
FW340-M-TL-E-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
CPH6616-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
NTL4502NT1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
VKM60-01P1Wickmann / Littelfuse |
MOSFET 4N-CH 100V 75A ECO-PAC2 |
|
NTMFD5C462NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |
|
NTTFS5C471NLTAGSanyo Semiconductor/ON Semiconductor |
AFSM T6 40V LL U8FL |