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SI5999EDU-T1-GE3

SI5999EDU-T1-GE3

MOSFET 2P-CH 20V 6A POWERPAK

BACC63BP18C31S6H

BACC63BP18C31S6H

CONN PLG HSG FMALE 31POS INLINE

SI5999EDU-T1-GE3

SI5999EDU-T1-GE3

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Part No :

SI5999EDU-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2P-CH 20V 6A POWERPAK
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
18000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SI5999EDU-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6A
Rds On (Max) @ Id, Vgs:59mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:496pF @ 10V
Power - Max:10.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® ChipFET™ Dual
Supplier Device Package:PowerPAK® ChipFet Dual
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