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IRF8915TR

IRF8915TR

MOSFET 2N-CH 20V 8.9A 8-SOIC

IRF8915TR

IRF8915TR

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Part No :

IRF8915TR

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 20V 8.9A 8-SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
477947 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 21 - Sep 25 2024
PDF
IRF8915TR PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:8.9A
Rds On (Max) @ Id, Vgs:18.3mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:540pF @ 10V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
IRF8915TR is available at GangBo-ic.com, Please review product page below for detailed information, including IRF8915TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF8915TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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